24 — Tesla Saber

Directed-Energy Electromagnetic Weapon and Tool

What It Is

Tesla Saber is Hardin Labs' directed-energy system — a compact, high-power electromagnetic emitter capable of projecting a focused beam of coherent electromagnetic radiation in the radio-frequency through optical spectrum for applications ranging from precision material processing and non-contact welding to active denial, electromagnetic pulse generation, and surgical cutting. Named for Nikola Tesla's pioneering work in high-frequency resonant energy transmission, the Tesla Saber embodies the principle of delivering enormous instantaneous power to a precise remote point without a physical projectile or chemical combustion mechanism.

Energy Source and Power Chain

The Tesla Saber draws primary power from either the SIFR reactor (for fixed installation), the Silixon Battery pack (for field-portable versions), or a dedicated Silixon Solar array. The raw DC power is converted to a high-voltage, high-frequency resonant waveform by a Rodin coil-based Tesla resonator — a toroidal transformer wound in Rodin coil geometry that achieves resonant voltage multiplication with exceptionally low loss, producing output voltages above 1 MV at pulse repetition rates up to 100 kHz from an input power of 100 kW. The resonant energy is capacitively coupled to a traveling-wave tube amplifier (TWTA) stage that drives the output emitter aperture.

Emitter Design

The emitter aperture is a phased-array antenna formed from 1,024 HLED-derived coherent microwave elements on a Silixon-HCB substrate, operating at 94 GHz (W-band). The phased array steers the beam in two dimensions without mechanical gimbal movement, at a steering rate of 10,000 positions per second. The Silixon-HS outer housing withstands the thermal load from return reflections and the emitter's own near-field heat generation. Effective radiated power at the aperture face is 1–10 GW per pulse depending on duty cycle, delivering sufficient energy density at 500 m range to ablate steel, ionize atmosphere for EMP effect, or incapacitate electronic systems through induced semiconductor junction breakdown.